| PART |
Description |
Maker |
| NCP105006 |
Monolithic High Voltage Gated Oscillator Power Switching Regulator
|
ON Semiconductor
|
| 3D7701Z-75 3D7701 3D7701-0.3 3D7701-0.4 3D7701-0.5 |
MONOLITHIC GATED DELAY LINE OSCILLATOR
|
Data Delay Devices, Inc...
DATADELAY[Data Delay Devices, Inc.]
|
| IXBH6N170 IXBT6N170 |
High Voltage, High Gain BIMOSFET?/a> Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH16N170A IXBT16N170A |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
| IXBH10N170 |
High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3061 |
High Voltage Monolithic IC
|
Renesas Technology
|
| ECN3064 |
High Voltage Monolithic IC
|
Renesas Technology
|
| TPD4144AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4113AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4105K |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| ECN2112 |
(ECN2102 / ECN2112) HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi Semiconductor
|
